Infineon Half Bridge XHP 2 N channel-Channel MOSFET Modules, 1050 A, 2300 V, 15-Pin XHP-2 FF1400R23T2E7PB5BPSA1
- RS庫存編號:
- 762-938
- 製造零件編號:
- FF1400R23T2E7PB5BPSA1
- 製造商:
- Infineon
N
小計（1 件）*
TWD76,553.00
(不含稅)
TWD80,380.65
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月14日 發貨
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單位 | 每單位 |
|---|---|
| 1 + | TWD76,553.00 |
* 參考價格
- RS庫存編號:
- 762-938
- 製造零件編號:
- FF1400R23T2E7PB5BPSA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET Modules | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 1050A | |
| Maximum Drain Source Voltage Vds | 2300V | |
| Package Type | XHP-2 | |
| Series | XHP 2 | |
| Mount Type | Screw | |
| Pin Count | 15 | |
| Maximum Drain Source Resistance Rds | 1.19mΩ | |
| Maximum Power Dissipation Pd | 2400kW | |
| Typical Gate Charge Qg @ Vgs | 10.5μC | |
| Forward Voltage Vf | 3.45V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS Compliant | |
| Length | 140mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET Modules | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 1050A | ||
Maximum Drain Source Voltage Vds 2300V | ||
Package Type XHP-2 | ||
Series XHP 2 | ||
Mount Type Screw | ||
Pin Count 15 | ||
Maximum Drain Source Resistance Rds 1.19mΩ | ||
Maximum Power Dissipation Pd 2400kW | ||
Typical Gate Charge Qg @ Vgs 10.5μC | ||
Forward Voltage Vf 3.45V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS Compliant | ||
Length 140mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon XHP 2 module integrates TRENCHSTOP IGBT7 technology with an emitter-controlled 7 diode and NTC. It is designed for high-performance applications, achieving superior efficiency and reliability in demanding electrical environments.
Low switching losses
High current density
Low inductive design
High power density
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