Infineon Half Bridge XHP 2 N channel-Channel MOSFET Modules, 1335 A, 2300 V Enhancement, 15-Pin AG-XHP2K33
- RS庫存編號:
- 762-885
- 製造零件編號:
- FF1000UXTR23T2M1B5BPSA1
- 製造商:
- Infineon
N
小計（1 件）*
TWD207,803.00
(不含稅)
TWD218,193.15
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 1 + | TWD207,803.00 |
* 參考價格
- RS庫存編號:
- 762-885
- 製造零件編號:
- FF1000UXTR23T2M1B5BPSA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET Modules | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 1335A | |
| Maximum Drain Source Voltage Vds | 2300V | |
| Package Type | AG-XHP2K33 | |
| Series | XHP 2 | |
| Mount Type | Screw | |
| Pin Count | 15 | |
| Maximum Drain Source Resistance Rds | 1.19mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 6.25V | |
| Typical Gate Charge Qg @ Vgs | 5.3μC | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS Compliant | |
| Length | 140mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET Modules | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 1335A | ||
Maximum Drain Source Voltage Vds 2300V | ||
Package Type AG-XHP2K33 | ||
Series XHP 2 | ||
Mount Type Screw | ||
Pin Count 15 | ||
Maximum Drain Source Resistance Rds 1.19mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 6.25V | ||
Typical Gate Charge Qg @ Vgs 5.3μC | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS Compliant | ||
Length 140mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon CoolSiC MOSFET half bridge module features voltage rating of 2300 V and supports high current density. It features AlSiC base plate for increased thermal cycling capability and high creepage and clearance distances.
Low inductive design
Low switching losses
High power density
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