Name: Vishay SiH N channel-Channel MOSFET, 47 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SiHK045N60EF
Brand: Vishay
SKU: 735-157
Price: 453.60 TWD
Availability: OutOfStock

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選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	N channel
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	600V
	Series	SiH
	Package Type	PowerPAK 10 x 12
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.045Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	70nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	278W
	Forward Voltage Vf	600V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	10mm
	Length	13mm
	Height	2mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type N channel
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 600V
	Series SiH
	Package Type PowerPAK 10 x 12
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.045Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 70nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 278W
	Forward Voltage Vf 600V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 10mm
	Length 13mm
	Height 2mm
	Automotive Standard No

Datasheet - SiHK045N60EF

COO (Country of Origin):: IL

The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

Vishay SiH N channel-Channel MOSFET, 47 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SiHK045N60EF

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