Vishay SQ2308FES N channel-Channel MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23-3 SQ2308FES-T1_BE3
- RS庫存編號:
- 735-118
- 製造零件編號:
- SQ2308FES-T1_BE3
- 製造商:
- Vishay
N
可享批量折扣
小計(1 組,共 1 件)*
TWD13.00
(不含稅)
TWD13.65
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月31日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 24 | TWD13.00 |
| 25 - 99 | TWD9.00 |
| 100 - 499 | TWD5.00 |
| 500 + | TWD4.00 |
* 參考價格
- RS庫存編號:
- 735-118
- 製造零件編號:
- SQ2308FES-T1_BE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23-3 | |
| Series | SQ2308FES | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.15Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.01mm | |
| Standards/Approvals | RoHS | |
| Length | 2.36mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23-3 | ||
Series SQ2308FES | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.15Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Operating Temperature 175°C | ||
Width 3.01mm | ||
Standards/Approvals RoHS | ||
Length 2.36mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay N-Channel MOSFET designed for efficient power management in demanding applications. It operates at a maximum drain-source voltage of 60V and is qualified according to AEC-Q101 standards.
Supports gate-source voltages of up to ± 20 V
Wide operating temperature range of -55 to +175 °C
Designed to minimise thermal resistance during operation
相關連結
- Vishay SQ23 Type N-Channel Single MOSFETs 60 V Enhancement, 3-Pin SOT-23 SQ2308FES-T1_GE3
- Vishay SQ23 Type N-Channel Single MOSFETs 60 V Enhancement, 3-Pin SOT-23
- Vishay SQ2318CES N channel-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23-3 SQ2318CES-T1_BE3
- Vishay SQ2337CES P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23-3 SQ2337CES-T1_BE3
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Nexperia BSH205G2 Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
