STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

N

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs

小計（1 卷，共 2500 件）*

TWD84,750.00

(不含稅)

TWD89,000.00

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 從 2026年4月13日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
2500 +TWD33.90TWD84,750.00

* 參考價格

RS庫存編號:
719-637
製造零件編號:
SGT350R70GTK
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Product Type

Power MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-252

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-1.4 to 7 V

Maximum Operating Temperature

150°C

Height

2.4mm

Length

6.2mm

Width

6.7 mm

COO (Country of Origin):
CN
The STMicroelectronics 700 V 6 A e-mode PowerGaN transistor combined with a well-established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultrafast switching operation to enable high-power density and unbeatable efficiency performances. Recommended for consumer QR applications with zero current turn-on.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

ESD safeguard

相關連結