STMicroelectronics Stl N channel-Channel Power MOSFET, 144 A, 40 V Enhancement, 8-Pin PowerFLAT STL140N4LF8
- RS庫存編號:
- 719-478
- 製造零件編號:
- STL140N4LF8
- 製造商:
- STMicroelectronics
N
可享批量折扣
小計（1 件）*
TWD22.00
(不含稅)
TWD23.10
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 300 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 24 | TWD22.00 |
| 25 - 99 | TWD20.00 |
| 100 - 499 | TWD18.00 |
| 500 + | TWD17.00 |
* 參考價格
- RS庫存編號:
- 719-478
- 製造零件編號:
- STL140N4LF8
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 144A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | Stl | |
| Package Type | PowerFLAT | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 94W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Length | 6.1mm | |
| Width | 5 mm | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 144A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series Stl | ||
Package Type PowerFLAT | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 94W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Length 6.1mm | ||
Width 5 mm | ||
The STMicroelectronics 40 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for Faster and more efficient switching.
MSL1 grade
175 °C maximum operating junction temperature
100% avalanche tested
Low gate charge Qg
相關連結
- STMicroelectronics STL N channel-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerFLAT STL270N6LF7
- STMicroelectronics STL Type N-Channel MOSFET 12 V Enhancement, 8-Pin PowerFLAT
- STMicroelectronics N-Channel STL Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerFLAT
- STMicroelectronics STL Type N-Channel MOSFET 12 V Enhancement, 8-Pin PowerFLAT STL320N4LF8
- STMicroelectronics STL Type N-Channel MOSFET 12 V Enhancement, 8-Pin PowerFLAT STL325N4LF8AG
- STMicroelectronics N-Channel STL Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerFLAT STL170N4LF8
- STMicroelectronics STL Type N-Channel N-Channel Mosfet 40 V, 8-Pin PowerFLAT STL160N4F8
- STMicroelectronics STL Type N-Channel MOSFET 40 V, 8-Pin PowerFLAT STL145N4LF8AG