STMicroelectronics STL Type N-Channel MOSFET, 55 A, 12 V Enhancement, 8-Pin PowerFLAT
- RS庫存編號:
- 248-4900
- 製造零件編號:
- STL325N4LF8AG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD233,400.00
(不含稅)
TWD245,070.00
(含稅)
添加 3000 件 件可免費送貨
暫時缺貨
- 從 2027年2月22日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD77.80 | TWD233,400.00 |
| 6000 + | TWD75.50 | TWD226,500.00 |
* 參考價格
- RS庫存編號:
- 248-4900
- 製造零件編號:
- STL325N4LF8AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | STL | |
| Package Type | PowerFLAT | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 188W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9 mm | |
| Standards/Approvals | UL | |
| Length | 6mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series STL | ||
Package Type PowerFLAT | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 188W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.9 mm | ||
Standards/Approvals UL | ||
Length 6mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel Power MOSFET that utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Used for switching applications
MSL1 grade
AEC-Q101 qualified
175 degree C operating temperature
100 percent avalanche tested
Wettable flank package
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