ROHM R8019KNZ4 Type N-Channel Single MOSFETs, 800 V Enhancement, 3-Pin TO-247 R8019KNZ4C13
- RS庫存編號:
- 687-367
- 製造零件編號:
- R8019KNZ4C13
- 製造商:
- ROHM
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 袋，共 2 件）*
TWD414.00
(不含稅)
TWD434.70
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年1月28日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每袋* |
|---|---|---|
| 2 - 18 | TWD207.00 | TWD414.00 |
| 20 - 98 | TWD182.50 | TWD365.00 |
| 100 - 198 | TWD163.50 | TWD327.00 |
| 200 + | TWD128.50 | TWD257.00 |
* 參考價格
- RS庫存編號:
- 687-367
- 製造零件編號:
- R8019KNZ4C13
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | R8019KNZ4 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.265Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 208W | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 16.24 mm | |
| Length | 40mm | |
| Height | 5.22mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 800V | ||
Series R8019KNZ4 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.265Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 208W | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Width 16.24 mm | ||
Length 40mm | ||
Height 5.22mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM N channel MOSFET designed for high-efficiency performance in electronic applications. Featuring a maximum Drain-Source voltage of 800V and a continuous drain current capability of 19A, this device effectively manages significant power loads while maintaining low on-resistance. Engineered with advanced switching capabilities, it provides rapid response times essential for efficient circuit operation. The encapsulation in a TO-247G package ensures straightforward mounting and excellent thermal performance, making it ideal for power management in everything from industrial systems to consumer electronics.
Low on resistance of just 0.265Ω, enhancing energy efficiency
Rated for continuous drain current of ±19A, allowing substantial power handling
Fast switching performance optimises the operation of dynamic circuits
Pb free lead plating ensures compliance with environmental standards
Robust avalanche ratings support reliable operation in transient conditions
Ideal for parallel usage, simplifying multiple device configurations.
相關連結
- ROHM R8011KNZ4 Type N-Channel Single MOSFETs 3-Pin TO-247 R8011KNZ4C13
- ROHM RH7G04CBKFRA Type N-Channel Single MOSFETs 8-Pin DFN3333T8LSAB RH7G04CBKFRATCB
- ROHM R4P Type N-Channel Single MOSFETs 3-Pin MPT3 R4P030N03HZGT100
- ROHM R2P Type N-Channel Single MOSFETs 3-Pin MPT3 R2P020N06HZGT100
- ROHM R4P Type N-Channel Single MOSFETs 3-Pin MPT3 R4P020N06HZGT100
- ROHM RY7P250BM Type N-Channel Single MOSFETs 8-Pin DFN8080T8LSHAAI RY7P250BMTBC
- ROHM RF9P120BKFRA Type N-Channel Single MOSFETs 6-Pin DFN2020Y7LSAA RF9P120BKFRATCR
- ROHM RJ1 Type N-Channel Single MOSFETs 3-Pin TO-263AB RJ1R04BBHTL1