ROHM RY7P250BM Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI RY7P250BMTBC

RS庫存編號:: 687-343
製造零件編號:: RY7P250BMTBC
製造商:: ROHM

ROHM RY7P250BM Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI RY7P250BMTBC

可享批量折扣

小計（1 組，共 2 件）*

TWD412.00

(不含稅)

TWD432.60

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每膠帶*
2 - 18	TWD206.00	TWD412.00
20 - 98	TWD181.50	TWD363.00
100 - 198	TWD163.00	TWD326.00
200 +	TWD128.00	TWD256.00

* 參考價格

RS庫存編號:: 687-343
製造零件編號:: RY7P250BMTBC
製造商:: ROHM

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選取全部	屬性	值
	品牌	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	100V
	Series	RY7P250BM
	Package Type	DFN8080T8LSHAAI
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.86mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	340W
	Typical Gate Charge Qg @ Vgs	240nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	1.7mm
	Width	1.70 mm
	Height	0.8mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 100V
	Series RY7P250BM
	Package Type DFN8080T8LSHAAI
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.86mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 340W
	Typical Gate Charge Qg @ Vgs 240nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 1.7mm
	Width 1.70 mm
	Height 0.8mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - RY7P250BMTBC

The ROHM Power MOSFET designed for demanding applications requiring excellent efficiency and reliability. This MOSFET is ideal for use in Hot Swap Controllers and other power switching applications, where its low on-resistance of 1.86mΩ ensures minimal energy loss during operation. This component is RoHS and halogen-free, making it a safe choice for environmentally conscious designs. With advanced features like 100% Rg and UIS testing, it guarantees robust performance under varying conditions, making it suitable for high-performance and high-reliability electronic circuits.

Low on resistance for enhanced efficiency

Wide-SOA characteristics for superior reliability

Designed to handle continuous drain currents up to 250A

High pulsed drain current capability at ±900A

Excellent thermal management with thermal resistance of 0.44°C/W

Suitable for a wide operating temperature range of -55 to +175°C

Complies with RoHS and halogen-free standards.

ROHM RY7P250BM Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI RY7P250BMTBC

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