Vishay SQ3426CEEV Type N-Channel Single MOSFETs, 7 A, 60 V Enhancement, 6-Pin TSOP-6 SQ3426CEEV-T1_GE3

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RS庫存編號:
653-061
製造零件編號:
SQ3426CEEV-T1_GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

60V

Package Type

TSOP-6

Series

SQ3426CEEV

Mount Type

PCB

Pin Count

6

Maximum Drain Source Resistance Rds

0.042Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19.5nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

2.98mm

Height

1.1mm

Length

3.10mm

Automotive Standard

AEC-Q101

Vishay SQ3426CEEV Series Single MOSFETs, 60V Drain Source Voltage, 7A Continuous Drain Current - SQ3426CEEV-T1_GE3


This single MOSFET device is an N‑channel enhancement transistor designed for power switching on PCB assemblies. It operates across a wide temperature range for demanding environments and conforms to RoHS and automotive stress requirements, making it suitable for industrial and vehicle electronics where controlled conduction and switching are required.

Features and Benefits:


• 60V drain rating enables medium‑voltage switching applications
• 7A continuous drain current supports substantial load currents
• 0.042 Ω low Rds(on) minimises conduction losses
• 19.5 nC gate charge permits predictable switching profiles
• 5W power dissipation allows moderate thermal loading
• 20V gate‑limit protects against excessive drive voltages

Applications


• Suitable for automotive power distribution modules
• Ideal for motor driver stages in control systems
• Used with DC-DC converter outputs for regulation
• Can be used for load switching in industrial electronics
• Suitable for power management on PCB‑mounted assemblies

What package type should designers plan for on the PCB?


The component arrives in a TSOP‑6 surface‑mount package requiring a six‑pin footprint and appropriate copper for thermal dissipation.

How does the device handle extreme temperatures in field use?


It is rated from -55 °C to 175 °C, supporting operation in both cold‑start and high‑temperature environments without derating the specified operating thresholds.

What electrical constraint must be observed at the gate?


The gate‑to‑source voltage must not exceed 20V to avoid overstress and potential device damage.

How does forward voltage affect switching performance?


The forward voltage of 1.2V influences conduction drop during on‑state transitions and should be factored into loss and thermal calculations.

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