Microchip VP0808 Type P-Channel Single MOSFETs, 280 mA, 80 V Enhancement, 3-Pin TO-92 VP0808L-G
- RS庫存編號:
- 649-535
- 製造零件編號:
- VP0808L-G
- 製造商:
- Microchip
可享批量折扣
小計(1 包,共 5 件)*
TWD232.00
(不含稅)
TWD243.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 960 件從 2026年1月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD46.40 | TWD232.00 |
| 50 - 245 | TWD40.80 | TWD204.00 |
| 250 - 495 | TWD36.60 | TWD183.00 |
| 500 + | TWD29.00 | TWD145.00 |
* 參考價格
- RS庫存編號:
- 649-535
- 製造零件編號:
- VP0808L-G
- 製造商:
- Microchip
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | VP0808 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 0.080 mm | |
| Length | 0.50mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 80V | ||
Series VP0808 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 0.080 mm | ||
Length 0.50mm | ||
Automotive Standard No | ||
The Microchip Enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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