Microchip VP0808 Type P-Channel Single MOSFETs, 280 mA, 80 V Enhancement, 3-Pin TO-92 VP0808L-G

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RS庫存編號:
649-535
製造零件編號:
VP0808L-G
製造商:
Microchip
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品牌

Microchip

Channel Type

Type P

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

280mA

Maximum Drain Source Voltage Vds

80V

Series

VP0808

Package Type

TO-92

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Width

0.080 mm

Length

0.50mm

Automotive Standard

No

The Microchip Enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

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