Microchip TN0106 Type N-Channel Single MOSFETs, 3.4 A, 60 V Enhancement, 3-Pin TO-92 TN0106N3-G
- RS庫存編號:
- 598-395
- 製造零件編號:
- TN0106N3-G
- 製造商:
- Microchip
小計（1 袋，共 1000 件）*
TWD22,700.00
(不含稅)
TWD23,840.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月30日 發貨
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單位 | 每單位 | 每袋* |
|---|---|---|
| 1000 + | TWD22.70 | TWD22,700.00 |
* 參考價格
- RS庫存編號:
- 598-395
- 製造零件編號:
- TN0106N3-G
- 製造商:
- Microchip
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TN0106 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | -55°C | |
| Length | 0.205in | |
| Width | 0.165 in | |
| Height | 0.82in | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TN0106 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature -55°C | ||
Length 0.205in | ||
Width 0.165 in | ||
Height 0.82in | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip N Channel Enhancement-Mode Vertical low-threshold transistor is built using a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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