onsemi NVM Type N-Channel Single MOSFETs, 66 A, 40 V Enhancement, 5-Pin DFN-5 NVMFWS004N04XMT1G
- RS庫存編號:
- 648-508
- 製造零件編號:
- NVMFWS004N04XMT1G
- 製造商:
- onsemi
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 10 件）*
TWD347.00
(不含稅)
TWD364.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | TWD34.70 | TWD347.00 |
| 100 - 490 | TWD21.50 | TWD215.00 |
| 500 - 990 | TWD12.50 | TWD125.00 |
| 1000 + | TWD12.20 | TWD122.00 |
* 參考價格
- RS庫存編號:
- 648-508
- 製造零件編號:
- NVMFWS004N04XMT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN-5 | |
| Series | NVM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Maximum Power Dissipation Pd | 38W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | PPAP capable, Halogen Free/BFR Free, Pb Free, RoHS | |
| Length | 6mm | |
| Width | 5 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN-5 | ||
Series NVM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Maximum Power Dissipation Pd 38W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals PPAP capable, Halogen Free/BFR Free, Pb Free, RoHS | ||
Length 6mm | ||
Width 5 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Small Footprint
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
AEC−Q101 Qualified and PPAP Capable
RoHS Compliant
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