Infineon AIMZA75 Type N-Channel MOSFET, 163 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R008M1HXKSA1
- RS庫存編號:
- 351-988
- 製造零件編號:
- AIMZA75R008M1HXKSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD2,163.00
(不含稅)
TWD2,271.15
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月10日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD2,163.00 |
| 10 - 99 | TWD1,947.00 |
| 100 + | TWD1,796.00 |
* 參考價格
- RS庫存編號:
- 351-988
- 製造零件編號:
- AIMZA75R008M1HXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 163A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | AIMZA75 | |
| Package Type | PG-TO247-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 14.0mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 517W | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Forward Voltage Vf | 5.3V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC Q101 | |
| Width | 15.9 mm | |
| Height | 5.1mm | |
| Length | 21.1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 163A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series AIMZA75 | ||
Package Type PG-TO247-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 14.0mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 517W | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Forward Voltage Vf 5.3V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC Q101 | ||
Width 15.9 mm | ||
Height 5.1mm | ||
Length 21.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- AT
The Infineon CoolSiC Automotive MOSFET is built over the solid silicon carbide technology. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
Superior efficiency in hard switching
Enables higher switching frequency
Higher reliability
Robustness against parasitic turn
Unipolar driving
相關連結
- Infineon IMZA75 Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R008M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R016M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R040M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R060M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R016M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R140M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R090M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R060M1HXKSA1