製造零件編號

Infineon IGT65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R140D2ATMA1

RS庫存編號:: 351-965
製造零件編號:: IGT65R140D2ATMA1
製造商:: Infineon

Infineon IGT65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R140D2ATMA1

可享批量折扣

小計（1 包，共 5 件）*

TWD653.00

(不含稅)

TWD685.65

訂單超過 $1,300.00 免費送貨

有庫存

加上 2,000 件從 2026年1月05日起發貨

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單位	每單位	每包*
5 - 45	TWD130.60	TWD653.00
50 - 95	TWD124.00	TWD620.00
100 +	TWD115.00	TWD575.00

* 參考價格

RS庫存編號:: 351-965
製造零件編號:: IGT65R140D2ATMA1
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	650V
	Series	IGT65
	Package Type	PG-HSOF-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.17Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	10 V
	Typical Gate Charge Qg @ Vgs	1.8nC
	Maximum Power Dissipation Pd	47W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 650V
	Series IGT65
	Package Type PG-HSOF-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.17Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 10 V
	Typical Gate Charge Qg @ Vgs 1.8nC
	Maximum Power Dissipation Pd 47W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGT65R140D2ATMA1

COO (Country of Origin):: MY

The Infineon CoolGaN is a highly efficient gallium nitride (GaN) transistor designed for power conversion. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial applications.

Enhancement mode transistor

Ultra fast switching

No reverse recovery charge

Capable of reverse conduction

Low gate and output charge

Superior commutation ruggedness

Infineon IGT65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R140D2ATMA1

訂單超過 $1,300.00 免費送貨

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