Infineon IMW65 Type N-Channel MOSFET, 130 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R010M2HXKSA1

可享批量折扣

小計(1 件)*

TWD1,207.00

(不含稅)

TWD1,267.35

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年7月13日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 - 9TWD1,207.00
10 - 99TWD1,086.00
100 +TWD1,002.00

* 參考價格

RS庫存編號:
351-950
製造零件編號:
IMW65R010M2HXKSA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

130A

Output Power

312W

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TO-247

Series

IMW65

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC

Length

16.3mm

Height

5.3mm

Width

21.5 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon CoolSiC MOSFET G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Enables BOM savings

Highest reliability

Enables top efficiency and power density

Ease of use

Full compatibility with existing vendors

Allows designs without fan or heatsink

相關連結