Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7AXTMA1
- RS庫存編號:
- 351-944
- 製造零件編號:
- IPDQ60T010S7AXTMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD1,193.00
(不含稅)
TWD1,252.65
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 750 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD1,193.00 |
| 10 - 99 | TWD1,074.00 |
| 100 + | TWD990.00 |
* 參考價格
- RS庫存編號:
- 351-944
- 製造零件編號:
- IPDQ60T010S7AXTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPDQ60 | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Maximum Power Dissipation Pd | 694W | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.35mm | |
| Standards/Approvals | AEC Q101 | |
| Width | 15.5 mm | |
| Length | 15.1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPDQ60 | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Maximum Power Dissipation Pd 694W | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Height 2.35mm | ||
Standards/Approvals AEC Q101 | ||
Width 15.5 mm | ||
Length 15.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS S7TA with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation and functional safety. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, Battery Disconnect, and eFuses.
Minimized conduction losses
Increased system performances
Allowing more compact design over EMR
Lower TCO over prolonged time
Enabling higher power density designs
Reduction of external sensing elements
Best utilization of power transistor
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