製造零件編號

Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7XTMA1

RS庫存編號:: 351-942
製造零件編號:: IPDQ60T010S7XTMA1
製造商:: Infineon

Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7XTMA1

可享批量折扣

小計（1 件）*

TWD1,147.00

(不含稅)

TWD1,204.35

訂單超過 $1,300.00 免費送貨

有庫存

750 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位
1 - 9	TWD1,147.00
10 - 99	TWD1,033.00
100 +	TWD952.00

* 參考價格

RS庫存編號:: 351-942
製造零件編號:: IPDQ60T010S7XTMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	174A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PG-HDSOP-22
	Series	IPDQ60
	Mount Type	Surface
	Pin Count	22
	Maximum Drain Source Resistance Rds	0.022Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	694W
	Typical Gate Charge Qg @ Vgs	318nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.82V
	Maximum Operating Temperature	150°C
	Length	15.1mm
	Width	15.5 mm
	Height	2.35mm
	Standards/Approvals	JEDEC
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 174A
	Maximum Drain Source Voltage Vds 600V
	Package Type PG-HDSOP-22
	Series IPDQ60
	Mount Type Surface
	Pin Count 22
	Maximum Drain Source Resistance Rds 0.022Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 694W
	Typical Gate Charge Qg @ Vgs 318nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.82V
	Maximum Operating Temperature 150°C
	Length 15.1mm
	Width 15.5 mm
	Height 2.35mm
	Standards/Approvals JEDEC
	Automotive Standard No

Datasheet - IPDQ60T010S7XTMA1

COO (Country of Origin):: MY

The Infineon CoolMOS S7T with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS.

Minimized conduction losses

Increased system performances

Allow more compact design over EMR

Lower TCO over prolonged time

Enabling higher power density designs

Reduction of external sensing elements

Best utilization of power transistor

Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7XTMA1

訂單超過 $1,300.00 免費送貨

相關連結