Infineon IPD Type N-Channel MOSFET, 90 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7XTMA1
- RS庫存編號:
- 348-998
- 製造零件編號:
- IPDQ60T022S7XTMA1
- 製造商:
- Infineon
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小計（1 件）*
TWD556.00
(不含稅)
TWD583.80
(含稅)
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* 參考價格
- RS庫存編號:
- 348-998
- 製造零件編號:
- IPDQ60T022S7XTMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 416W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, JS-001, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 416W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, JS-001, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS S7T enables the best price performance for low frequency switching applications. The embedded temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7T is optimized for static switching and high current applications. The new temperature sensor enhances S7 features, allowing the best possible utilization of the power transistor.
Increased system performance
Increased system performance
More compact and more straightforward design
Lower BOM or TCO over a prolonged lifetime
More reliability and longer system lifetime
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