Infineon IPD Type N-Channel MOSFET, 90 A, 60 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7AXTMA1
- RS庫存編號:
- 349-198
- 製造零件編號:
- IPDQ60T022S7AXTMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD574.00
(不含稅)
TWD602.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 750 件準備從其他地點送貨
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|---|---|
| 1 - 9 | TWD574.00 |
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| 100 + | TWD476.00 |
* 參考價格
- RS庫存編號:
- 349-198
- 製造零件編號:
- IPDQ60T022S7AXTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPD | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 416W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC Q101, JEDEC, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPD | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 416W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC Q101, JEDEC, RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS S7TA enables the best price performance for low frequency switching applications. The embedded temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7TA is optimized for static switching and high current applications. The new temperature sensor enhances S7A features, allowing the best possible utilization of the power transistor.
Optimized price performance in low frequency switching applications
High pulse current capability
Seamless diagnostics at lowest system cost
Increased system performance
Minimized conduction losses
More reliability and longer system lifetime
Shock and vibration resistance
No contact arcing or bouncing
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