Semikron Danfoss SEMITOP SiC Power Module, 267 A, 1200 V SEMITOP E2 SK250MB120CR03TE2
- RS庫存編號:
- 351-860
- 製造零件編號:
- SK250MB120CR03TE2
- 製造商:
- Semikron Danfoss
小計（1 件）*
TWD8,665.00
(不含稅)
TWD9,098.25
(含稅)
訂單超過 $1,300.00 免費送貨
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- 38 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 1 + | TWD8,665.00 |
* 參考價格
- RS庫存編號:
- 351-860
- 製造零件編號:
- SK250MB120CR03TE2
- 製造商:
- Semikron Danfoss
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Semikron Danfoss | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 267A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SEMITOP | |
| Package Type | SEMITOP E2 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 7.2mΩ | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Forward Voltage Vf | 4.6V | |
| Typical Gate Charge Qg @ Vgs | 708nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747-1, UL | |
| Width | 57 mm | |
| Length | 63mm | |
| Height | 12mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Semikron Danfoss | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 267A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SEMITOP | ||
Package Type SEMITOP E2 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 7.2mΩ | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Forward Voltage Vf 4.6V | ||
Typical Gate Charge Qg @ Vgs 708nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747-1, UL | ||
Width 57 mm | ||
Length 63mm | ||
Height 12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IT
The Semikron SiC MOSFET WS half-bridge features a 267 A current rating and is simple to drive with a +15V gate voltage. It offers optimized switching stability with module-integrated gate resistors and includes an integrated NTC temperature sensor for efficient thermal monitoring. UL recognized under file no. E63532.
Optimized design for superior thermal performance
Extremely low inductance design
Press Fit contact technology
1200V Planar Gen3 SiC MOSFET
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