Infineon Type N-Channel MOSFET, 185 A, 1200 V Enhancement FF3MR12KM1HHPSA1

查看所有MOSFETs

小計（1 件）*

TWD24,564.00

(不含稅)

TWD25,792.20

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 10 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 +TWD24,564.00

* 參考價格

RS庫存編號:
349-315
製造零件編號:
FF3MR12KM1HHPSA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

185A

Maximum Drain Source Voltage Vds

1200V

Mount Type

Screw

Maximum Drain Source Resistance Rds

6.32mΩ

Channel Mode

Enhancement

Forward Voltage Vf

5.59V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60747, IEC 60749, IEC 60068

Automotive Standard

No

COO (Country of Origin):
HU
The Infineon 62 mm CoolSiC MOSFET Half-Bridge Module is housed in the well-known 62 mm packaging, combining the latest M1H chip technology for optimal performance. This module delivers high current density, making it ideal for applications that require compact yet powerful solutions. It offers low switching losses, ensuring efficient operation even at high frequencies, and features superior gate oxide reliability for enhanced durability over time.

Minimizes cooling efforts

Reduction in volume and size

Reduced system costs

Symmetrical module design

Standard construction technique

相關連結