Infineon IPW Type N-Channel Power Transistor, 123 A, 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1
- RS庫存編號:
- 349-265
- 製造零件編號:
- IPW60R016CM8XKSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD625.00
(不含稅)
TWD656.25
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 240 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD625.00 |
| 10 - 99 | TWD563.00 |
| 100 + | TWD519.00 |
* 參考價格
- RS庫存編號:
- 349-265
- 製造零件編號:
- IPW60R016CM8XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 123A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 171nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 521W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 123A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 171nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 521W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Suitable for hard and soft switching topologies
Ease of use and fast design in through low ringing tendency
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Increased power density solutions enabled by using products with smaller footprint
相關連結
- Infineon IPW Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO-247 IPW60R037CM8XKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R115CFD7AXKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R099CFD7AXKSA1
- Infineon IPW MOSFET 650 V PG-TO-247
- Infineon IPW MOSFET 650 V PG-TO-247 IPW65R050CFD7AXKSA1
- Infineon IPW MOSFET 650 V, 3-Pin PG-TO-247