Infineon IPT Type N-Channel MOSFET, 297 A, 135 V Enhancement, 16-Pin PG-HSOF-16 IPTC020N13NM6ATMA1

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RS庫存編號:
349-133
製造零件編號:
IPTC020N13NM6ATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

297A

Maximum Drain Source Voltage Vds

135V

Package Type

PG-HSOF-16

Series

IPT

Mount Type

Surface

Pin Count

16

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

395W

Typical Gate Charge Qg @ Vgs

159nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high performance power applications. It offers very low on-resistance (RDS(on)), reducing conduction losses and enhancing efficiency. The MOSFET features an excellent gate charge x RDS(on) product (FOM) for superior switching performance. It also boasts a very low reverse recovery charge (Qrr), optimizing efficiency during switching events. With a high avalanche energy rating, it ensures reliability under demanding conditions and operates effectively at 175°C, making it ideal for high temperature environments.

Optimized for high frequency switching and synchronous rectification

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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