Infineon IPT Type N-Channel Power Transistor, 297 A, 135 V Enhancement, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1
- RS庫存編號:
- 349-120
- 製造零件編號:
- IPT020N13NM6ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD432.00
(不含稅)
TWD453.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,000 件從 2026年2月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD216.00 | TWD432.00 |
| 20 - 198 | TWD194.50 | TWD389.00 |
| 200 - 998 | TWD179.00 | TWD358.00 |
| 1000 - 1998 | TWD166.50 | TWD333.00 |
| 2000 + | TWD149.00 | TWD298.00 |
* 參考價格
- RS庫存編號:
- 349-120
- 製造零件編號:
- IPT020N13NM6ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 297A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 159nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 39W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, J-STD-020, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 297A | ||
Maximum Drain Source Voltage Vds 135V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 159nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 39W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for efficient power switching applications. It offers very low on-resistance (RDS(on)), reducing conduction losses and improving overall performance. With an excellent gate charge x RDS(on) product (FOM), it ensures superior switching efficiency. The MOSFET also features very low reverse recovery charge (Qrr) for better efficiency during switching events.
Optimized for motor drives and battery powered applications
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
相關連結
- Infineon IPT Type N-Channel MOSFET 135 V Enhancement, 16-Pin PG-HSOF-16 IPTC020N13NM6ATMA1
- Infineon IPT Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-HSOG-8 IPTG020N13NM6ATMA1
- Infineon IPT Type N-Channel Power Transistor 650 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel Power Transistor 650 V Enhancement, 8-Pin PG-HSOF-8 IPT60R045CFD7XTMA1
- Infineon IPT Type N-Channel Power Transistor 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1
- Infineon IPT Type N-Channel Power Transistor 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1
- Infineon IPT Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-HSOG-8 IPTG029N13NM6ATMA1
- Infineon IPT Type N-Channel MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1