Infineon IPT Type N-Channel Power Transistor, 297 A, 135 V Enhancement, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1
- RS庫存編號:
- 349-120
- 製造零件編號:
- IPT020N13NM6ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD432.00
(不含稅)
TWD453.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,000 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD216.00 | TWD432.00 |
| 20 - 198 | TWD194.50 | TWD389.00 |
| 200 - 998 | TWD179.00 | TWD358.00 |
| 1000 - 1998 | TWD166.50 | TWD333.00 |
| 2000 + | TWD149.00 | TWD298.00 |
* 參考價格
- RS庫存編號:
- 349-120
- 製造零件編號:
- IPT020N13NM6ATMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 297A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Series | IPT | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 159nC | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, J-STD-020, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 297A | ||
Maximum Drain Source Voltage Vds 135V | ||
Series IPT | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 159nC | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for efficient power switching applications. It offers very low on-resistance (RDS(on)), reducing conduction losses and improving overall performance. With an excellent gate charge x RDS(on) product (FOM), it ensures superior switching efficiency. The MOSFET also features very low reverse recovery charge (Qrr) for better efficiency during switching events.
Optimized for motor drives and battery powered applications
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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