Infineon CoolSiC Type N-Channel MOSFET, 37 A, 650 V Enhancement, 8-Pin PG-LHSOF-4 IMTA65R060M2HXTMA1
- RS庫存編號:
- 349-060
- 製造零件編號:
- IMTA65R060M2HXTMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD270.00
(不含稅)
TWD283.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年11月22日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD270.00 |
| 10 - 99 | TWD244.00 |
| 100 - 499 | TWD224.00 |
| 500 - 999 | TWD208.00 |
| 1000 + | TWD187.00 |
* 參考價格
- RS庫存編號:
- 349-060
- 製造零件編號:
- IMTA65R060M2HXTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | PG-LHSOF-4 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 165W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type PG-LHSOF-4 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 165W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, making it ideal for meeting the ever-growing demands of modern power systems and markets. Its advanced technology provides a powerful solution for achieving high system efficiency in a wide range of applications.
Ultra low switching losses
Robust against parasitic turn‑on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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