ROHM RQ3N060AT Type P-Channel MOSFET, 18 A, 80 V Enhancement, 8-Pin HSOP-8 RQ3N060ATTB1

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TWD254.00

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TWD266.70

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250 - 490TWD22.30TWD223.00
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1000 +TWD19.80TWD198.00

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RS庫存編號:
331-689
製造零件編號:
RQ3N060ATTB1
製造商:
ROHM
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品牌

ROHM

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

80V

Package Type

HSOP-8

Series

RQ3N060AT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

20W

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

50nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The ROHM Power MOSFET is a low on resistance MOSFET ideal for switching and motor drives applications. This power MOSFET comes in a high power small mould package.

Pb free plating

RoHS compliant

Halogen free

100 percent Rg and UIS tested

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