ROHM Dual (Nch+Pch) HP8K 2 Type N, Type P-Channel MOSFET, 100 V Enhancement, 8-Pin HSOP-8 HP8ME5TB1

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小計(1 組,共 10 件)*

TWD265.00

(不含稅)

TWD278.20

(含稅)

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單位
每單位
每膠帶*
10 - 90TWD26.50TWD265.00
100 - 240TWD25.20TWD252.00
250 - 490TWD23.40TWD234.00
500 - 990TWD21.50TWD215.00
1000 +TWD20.70TWD207.00

* 參考價格

包裝方式:
RS庫存編號:
264-877
製造零件編號:
HP8ME5TB1
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Drain Source Voltage Vds

100V

Series

HP8K

Package Type

HSOP-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

273mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

19.7nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual (Nch+Pch)

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 8.5A. Designed in an HSOP8 package and offers low on-resistance.

Low on-resistance

Small Surface Mount Package (HSOP8)

Pb-free lead plating and RoHS compliant

Halogen Free

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