ROHM HP8K 2 Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin HSOP-8 HP8KE6TB1

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TWD162.00

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TWD170.10

(含稅)

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每單位
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5 - 45TWD32.40TWD162.00
50 - 95TWD30.80TWD154.00
100 - 495TWD28.60TWD143.00
500 - 995TWD26.20TWD131.00
1000 +TWD25.40TWD127.00

* 參考價格

包裝方式:
RS庫存編號:
264-871
製造零件編號:
HP8KE6TB1
製造商:
ROHM
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品牌

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

100V

Package Type

HSOP-8

Series

HP8K

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

54mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

21W

Typical Gate Charge Qg @ Vgs

6.7nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 17A. Designed in an HSOP8 package and offers low on-resistance.

Low on-resistance

Small Surface Mount Package (HSOP8)

Pb-free lead plating and RoHS compliant

Halogen Free

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