Infineon CoolMOS Type N-Channel MOSFET, 36.5 A, 950 V Enhancement, 3-Pin PG-TO-247 IPW95R130PFD7XKSA1
- RS庫存編號:
- 284-922
- 製造零件編號:
- IPW95R130PFD7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
TWD4,206.00
(不含稅)
TWD4,416.30
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月07日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 90 | TWD140.20 | TWD4,206.00 |
| 120 + | TWD133.20 | TWD3,996.00 |
* 參考價格
- RS庫存編號:
- 284-922
- 製造零件編號:
- IPW95R130PFD7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36.5A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | CoolMOS | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 227W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36.5A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series CoolMOS | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 227W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an Advanced power device represents the latest innovation in super junction technology, specifically designed for demanding applications such as lighting and industrial power supplies. The integration of ultra fast body diodes enhances responsiveness, making it Ideal for resonant topologies. With robust performance and superior reliability, this device stands at the forefront of efficiency in power management. Special attention has been given to reducing reverse recovery charge, enabling higher switching frequencies and increased power density in designs.
Integrated fast body diode ensures reliability
Best in class thermal performance for efficient heat dissipation
Durable construction promotes long term stability
Seamless integration into existing circuits
Optimal for high voltage applications with enhanced safety
Compact package reduces PCB footprint and increases flexibility
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