Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1

RS庫存編號:: 284-770
製造零件編號:: IQE050N08NM5CGSCATMA1
製造商:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 6000 件）*

TWD385,800.00

(不含稅)

TWD405,120.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月21日發貨

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單位	每單位	每卷*
6000 +	TWD64.30	TWD385,800.00

* 參考價格

RS庫存編號:: 284-770
製造零件編號:: IQE050N08NM5CGSCATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PG-WHTFN-9
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	5.0mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	100W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 80V
	Package Type PG-WHTFN-9
	Series OptiMOS
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 5.0mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 100W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - IQE050N08NM5CGSCATMA1

The Infineon MOSFET features an power transistor is an exemplary choice for applications requiring high efficiency and reliability. Optimised for synchronous rectification, this N channel device is part of the OptiMOS 5 series, renowned for its robust thermal performance and low on resistance. The device operates effectively at voltages of up to 80V, making it suitable for a wide range of industrial applications. With features such as 100% avalanche testing and a Pb free design compliant with RoHS standards, this product embodies both safety and sustainability in its manufacturing process. Its small footprint and high performance manifest in the Advanced design that ensures superior thermal characteristics, presenting an excellent option for designers aiming to improve overall system efficiency.

Optimised for synchronous rectification

N channel for easy circuit integration

Low on resistance reduces power losses

Robust thermal resistance for reliability

Avalanche tested for extreme conditions

Pb free lead plating for safety

Halogen free construction meets IEC standards

Qualified per JEDEC industry standards

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1

訂單超過 $1,300.00 免費送貨

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