Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- RS庫存編號:
- 284-755
- 製造零件編號:
- IQE022N06LM5SCATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD425.00
(不含稅)
TWD446.25
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 100 件從 2026年1月19日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD85.00 | TWD425.00 |
| 50 - 95 | TWD80.60 | TWD403.00 |
| 100 - 495 | TWD74.80 | TWD374.00 |
| 500 - 995 | TWD68.80 | TWD344.00 |
| 1000 + | TWD66.20 | TWD331.00 |
* 參考價格
- RS庫存編號:
- 284-755
- 製造零件編號:
- IQE022N06LM5SCATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-WHSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC, IEC61249-2-21 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-WHSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is a highly efficient MOSFET designed to meet the demands of Advanced power management applications. With a power dissipation capacity that allows it to operate reliably under intense conditions, this power transistor ensures optimal efficiency and thermal management. Its Pb free and RoHS compliant construction endorses its usability in eco sensitive applications, while also being halogen free, enhancing its adaptability across various sectors. Fully qualified according to JEDEC standards for industrial applications, it is a trusted component for engineers seeking reliable, high performance solutions.
Optimised for power management
Supports synchronous rectification in SMPS
N channel with logic level compatibility
Very low on resistance for thermal performance
Superior thermal resistance for reliability
100% avalanche tested for operational assurance
Complies with environmental regulations
Comprehensive validation for industrial use
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