Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 59 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1

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RS庫存編號:
284-730
製造零件編號:
IMT65R083M1HXUMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

111mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

23 V

Maximum Power Dissipation Pd

158W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon 650 V CoolSiC MOSFET is engineered with cutting edge silicon carbide technology, offering unmatched efficiency and reliability for demanding applications. This next generation component is designed to optimise performance across various high temperature and challenging operating environments. Its innovative design, refined over 20 years, effortlessly combines high operational reliability with user friendly integration. The increase in power density and reduction in system size makes it an Ideal choice for applications such as solar inverters, electric vehicle charging infrastructure, and energy storage solutions, allowing for seamless implementation in power supply systems.

Optimised switching behaviour enhances efficiency

Robust body diode ensures reliable commutation

Designed for high temperature operations

Simplified integration into existing circuits

Exceptional thermal performance for demanding environments

Superior avalanche capability for system safety

Significant reduction in switching losses

Ideal for high power density applications

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