onsemi NTBL Type N-Channel MOSFET, 37 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL075N065SC1
- RS庫存編號:
- 220-564
- 製造零件編號:
- NTBL075N065SC1
- 製造商:
- onsemi
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小計(1 組,共 1 件)*
TWD250.00
(不含稅)
TWD262.50
(含稅)
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膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | TWD250.00 |
| 10 - 99 | TWD224.00 |
| 100 - 499 | TWD207.00 |
| 500 - 999 | TWD192.00 |
| 1000 + | TWD157.00 |
* 參考價格
- RS庫存編號:
- 220-564
- 製造零件編號:
- NTBL075N065SC1
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HPSOF-8L | |
| Series | NTBL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.4V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Power Dissipation Pd | 139W | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.9mm | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HPSOF-8L | ||
Series NTBL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.4V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Power Dissipation Pd 139W | ||
Maximum Operating Temperature 175°C | ||
Length 9.9mm | ||
Height 2.3mm | ||
Standards/Approvals RoHS | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
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