onsemi NTBL Type N-Channel MOSFET, 37 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL075N065SC1
- RS庫存編號:
- 220-564
- 製造零件編號:
- NTBL075N065SC1
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 1 件）*
TWD223.00
(不含稅)
TWD234.15
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | TWD223.00 |
| 10 - 99 | TWD200.00 |
| 100 - 499 | TWD185.00 |
| 500 - 999 | TWD171.00 |
| 1000 + | TWD140.00 |
* 參考價格
- RS庫存編號:
- 220-564
- 製造零件編號:
- NTBL075N065SC1
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTBL | |
| Package Type | HPSOF-8L | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.4V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Power Dissipation Pd | 139W | |
| Maximum Gate Source Voltage Vgs | 22.6 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS | |
| Height | 2.3mm | |
| Width | 10.38 mm | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTBL | ||
Package Type HPSOF-8L | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.4V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Power Dissipation Pd 139W | ||
Maximum Gate Source Voltage Vgs 22.6 V | ||
Maximum Operating Temperature 175°C | ||
Length 9.9mm | ||
Standards/Approvals RoHS | ||
Height 2.3mm | ||
Width 10.38 mm | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
相關連結
- onsemi NTBL Type N-Channel MOSFET 650 V Enhancement, 8-Pin HPSOF-8L NTBL060N065SC1
- onsemi EliteSiC Type N-Channel MOSFET 650 V N, 8-Pin HPSOF-8L NTBL023N065M3S
- onsemi EliteSiC Type N-Channel MOSFET 650 V N, 8-Pin HPSOF-8L NTBL032N065M3S
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin HPSOF-8L
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-LHSOF-4 IMTA65R060M2HXTMA1
- onsemi NTMT150N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi NTMT190N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN