onsemi NTBL N-Channel MOSFET, 46 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL060N065SC1
- RS庫存編號:
- 220-562
- 製造零件編號:
- NTBL060N065SC1
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
享受批量購買折扣
額外添加10件可節省10%
查看批量定價選項小計(1 組,共 1 件)*
TWD346.00
(不含稅)
TWD363.30
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
膠帶 | 每膠帶 | 節省 |
|---|---|---|
| 1 - 9 | TWD346.00 | - |
| 10 - 99 | TWD311.00 | 10% |
| 100 - 499 | TWD287.00 | 17% |
| 500 - 999 | TWD265.00 | 23% |
| 1000 + | TWD217.00 | 37% |
* 參考價格
- RS庫存編號:
- 220-562
- 製造零件編號:
- NTBL060N065SC1
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HPSOF-8L | |
| Series | NTBL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 170W | |
| Forward Voltage Vf | 4.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Gate Source Voltage Vgs | 22.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Height | 2.3mm | |
| Length | 9.9mm | |
| Width | 10.38mm | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HPSOF-8L | ||
Series NTBL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 170W | ||
Forward Voltage Vf 4.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Gate Source Voltage Vgs 22.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Height 2.3mm | ||
Length 9.9mm | ||
Width 10.38mm | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
相關連結
- onsemi NTBL N-Channel MOSFET 650 V Enhancement, 8-Pin HPSOF-8L NTBL075N065SC1
- onsemi EliteSiC N-Channel MOSFET 650 V Enhancement, 8-Pin HPSOF-8L NTBL023N065M3S
- onsemi EliteSiC N-Channel MOSFET 650 V Enhancement, 8-Pin HPSOF-8L NTBL032N065M3S
- onsemi NTB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1
- onsemi NTHL N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 NTHL065N65S3HF
- Infineon CoolSiC N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IMW65R039M1HXKSA1
- Infineon IPB65R N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB65R045C7ATMA2
- onsemi SiC Power N-Channel MOSFET 650 V N, 4-Pin TO-247
