onsemi NTMFS3 Type N-Channel MOSFET, 83 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS3D1N04XMT1G
- RS庫存編號:
- 220-549
- 製造零件編號:
- NTMFS3D1N04XMT1G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 10 件）*
TWD179.00
(不含稅)
TWD188.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | TWD17.90 | TWD179.00 |
| 100 - 240 | TWD17.00 | TWD170.00 |
| 250 - 490 | TWD15.80 | TWD158.00 |
| 500 - 990 | TWD14.50 | TWD145.00 |
| 1000 + | TWD14.10 | TWD141.00 |
* 參考價格
- RS庫存編號:
- 220-549
- 製造零件編號:
- NTMFS3D1N04XMT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN-5 | |
| Series | NTMFS3 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 39W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15.6nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN-5 | ||
Series NTMFS3 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 39W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15.6nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Length 6.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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