STMicroelectronics MDmesh Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247 STW20NM60
- RS庫存編號:
- 151-453
- 製造零件編號:
- STW20NM60
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD2,802.00
(不含稅)
TWD2,942.10
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 480 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 90 | TWD93.40 | TWD2,802.00 |
| 120 + | TWD88.70 | TWD2,661.00 |
* 參考價格
- RS庫存編號:
- 151-453
- 製造零件編號:
- STW20NM60
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.29Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | 50°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.15mm | |
| Width | 15.75 mm | |
| Standards/Approvals | RoHS | |
| Length | 34.95mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.29Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature 50°C | ||
Maximum Operating Temperature 150°C | ||
Height 5.15mm | ||
Width 15.75 mm | ||
Standards/Approvals RoHS | ||
Length 34.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET associates the multiple drain process with the company’s Power MESH horizontal layout. The resulting product has an outstanding low on resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
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