IXYS IXYK100N120C3, Type N-Channel high Speed IGBT, 100 A 1200 V, 3-Pin TO-264, Through Hole

RS庫存編號:: 808-0293
Distrelec 貨號:: 302-53-451
製造零件編號:: IXYK100N120C3
製造商:: IXYS

IXYS IXYK100N120C3, Type N-Channel high Speed IGBT, 100 A 1200 V, 3-Pin TO-264, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 件）*

TWD900.00

(不含稅)

TWD945.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 8 個，準備發貨

單位	每單位
1 - 6	TWD900.00
7 - 12	TWD878.00
13 +	TWD864.00

* 參考價格

RS庫存編號:: 808-0293
Distrelec 貨號:: 302-53-451
製造零件編號:: IXYK100N120C3
製造商:: IXYS

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	IXYS
	Product Type	high Speed IGBT
	Maximum Continuous Collector Current Ic	100A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	1150W
	Package Type	TO-264
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Switching Speed	50kHz
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	3.5V
	Maximum Operating Temperature	175°C
	Width	16.13 mm
	Standards/Approvals	International Standard Packages
	Length	20.32mm
	Series	GenX3TM
	Automotive Standard	No

	選取全部
	品牌 IXYS
	Product Type high Speed IGBT
	Maximum Continuous Collector Current Ic 100A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 1150W
	Package Type TO-264
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Switching Speed 50kHz
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 3.5V
	Maximum Operating Temperature 175°C
	Width 16.13 mm
	Standards/Approvals International Standard Packages
	Length 20.32mm
	Series GenX3TM
	Automotive Standard No

IGBT Discretes, IXYS XPT series

The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)

Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage

Short circuit capability for 10usec

Positive on-state voltage temperature coefficient

Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes

International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

IXYS IXYK100N120C3, Type N-Channel high Speed IGBT, 100 A 1200 V, 3-Pin TO-264, Through Hole

訂單超過 $1,300.00 免費送貨

IGBT Discretes, IXYS XPT series

IGBT Discretes & Modules, IXYS

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