IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 920-1007
- 製造零件編號:
- IXYH50N120C3D1
- 製造商:
- IXYS
當前暫無庫存,可於02/12/2024發貨,6 工作日送達。
單價(不含稅) 毎管:30 個
TWD396.20
(不含稅)
TWD416.01
(含稅)
單位 | 每單位 | Per Tube* |
---|---|---|
30 - 30 | TWD396.20 | TWD11,886.00 |
60 - 90 | TWD387.60 | TWD11,628.00 |
120 + | TWD379.00 | TWD11,370.00 |
* 參考價格
- RS庫存編號:
- 920-1007
- 製造零件編號:
- IXYH50N120C3D1
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- US
產品詳細資訊
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
---|---|
Maximum Continuous Collector Current | 90 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 625 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 50kHz |
Transistor Configuration | Single |
Dimensions | 16.26 x 5.3 x 21.46mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |