IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264, Through Hole

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包裝方式：
RS庫存編號:
808-0237
製造零件編號:
IXYB82N120C3H1
製造商:
IXYS
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品牌

IXYS

Maximum Continuous Collector Current

164 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1.04 kW

Package Type

PLUS264

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

50kHz

Transistor Configuration

Single

Dimensions

20.29 x 5.31 x 26.59mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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