Infineon IGBT Module, 200 A 1200 V Module, Panel
- RS庫存編號:
- 273-7405
- 製造零件編號:
- FS150R12PT4BOSA1
- 製造商:
- Infineon
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TWD5,255.00
(不含稅)
TWD5,517.75
(含稅)
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* 參考價格
- RS庫存編號:
- 273-7405
- 製造零件編號:
- FS150R12PT4BOSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 200A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 680W | |
| Package Type | Module | |
| Mount Type | Panel | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 87 mm | |
| Standards/Approvals | IEC61140, ULapproved(E83335), EN61140 | |
| Height | 20.5mm | |
| Length | 130mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 200A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 680W | ||
Package Type Module | ||
Mount Type Panel | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 87 mm | ||
Standards/Approvals IEC61140, ULapproved(E83335), EN61140 | ||
Height 20.5mm | ||
Length 130mm | ||
Automotive Standard No | ||
The Infineon IGBT module has VCEsat with positive temperature coefficient. This GBT module has 1200V collector emitter voltage and 150A continuous DC collector current. This IGBT module used for high power converters, motor drives and UPS system application.
Low VCEsat
Standard housing
Isolated base plate
Low switching losses