Infineon FP50R12W2T7BPSA1, Type N-Channel Common Emitter IGBT, 50 A 1200 V, 35-Pin EasyPIM, Panel
- RS庫存編號:
- 273-2925
- 製造零件編號:
- FP50R12W2T7BPSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 托盤，共 15 件）*
TWD23,506.50
(不含稅)
TWD24,681.90
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 30 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 15 - 15 | TWD1,567.10 | TWD23,506.50 |
| 30 + | TWD1,535.70 | TWD23,035.50 |
* 參考價格
- RS庫存編號:
- 273-2925
- 製造零件編號:
- FP50R12W2T7BPSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 6 | |
| Package Type | EasyPIM | |
| Configuration | Common Emitter | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 35 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.5mm | |
| Standards/Approvals | RoHS, IEC 60747 | |
| Width | 45 mm | |
| Length | 107.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 6 | ||
Package Type EasyPIM | ||
Configuration Common Emitter | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 35 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 15.5mm | ||
Standards/Approvals RoHS, IEC 60747 | ||
Width 45 mm | ||
Length 107.5mm | ||
Automotive Standard No | ||
The Infineon three phase input rectifier PIM (power integrated modules) IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode and NTC.
Overload operation up to 175°C
High power density
Compact design
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