Infineon, Type N-Channel Common Emitter IGBT, 50 A 1200 V Module, Panel
- RS庫存編號:
- 273-2932
- 製造零件編號:
- FS50R12W1T7B11BOMA1
- 製造商:
- Infineon
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TWD1,245.00
(不含稅)
TWD1,307.25
(含稅)
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| 1 - 4 | TWD1,245.00 |
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* 參考價格
- RS庫存編號:
- 273-2932
- 製造零件編號:
- FS50R12W1T7B11BOMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 6 | |
| Configuration | Common Emitter | |
| Package Type | Module | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.64V | |
| Maximum Operating Temperature | 125°C | |
| Width | 33.8 mm | |
| Height | 16.4mm | |
| Length | 62.8mm | |
| Standards/Approvals | EN61140, IEC61140 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 6 | ||
Configuration Common Emitter | ||
Package Type Module | ||
Mount Type Panel | ||
Channel Type Type N | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.64V | ||
Maximum Operating Temperature 125°C | ||
Width 33.8 mm | ||
Height 16.4mm | ||
Length 62.8mm | ||
Standards/Approvals EN61140, IEC61140 | ||
Automotive Standard No | ||
The Infineon IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode, NTC and pressFIT contact technology.
High power density
Compact design