Infineon FS50R12W1T7B11BOMA1, Type N-Channel Common Emitter IGBT, 50 A 1200 V Module, Panel
- RS庫存編號:
- 273-2931
- 製造零件編號:
- FS50R12W1T7B11BOMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 托盤，共 24 件）*
TWD26,263.20
(不含稅)
TWD27,576.48
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月19日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 24 - 24 | TWD1,094.30 | TWD26,263.20 |
| 48 + | TWD1,072.40 | TWD25,737.60 |
* 參考價格
- RS庫存編號:
- 273-2931
- 製造零件編號:
- FS50R12W1T7B11BOMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation Pd | 20mW | |
| Package Type | Module | |
| Configuration | Common Emitter | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.64V | |
| Maximum Operating Temperature | 125°C | |
| Height | 16.4mm | |
| Standards/Approvals | EN61140, IEC61140 | |
| Width | 33.8 mm | |
| Length | 62.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation Pd 20mW | ||
Package Type Module | ||
Configuration Common Emitter | ||
Mount Type Panel | ||
Channel Type Type N | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.64V | ||
Maximum Operating Temperature 125°C | ||
Height 16.4mm | ||
Standards/Approvals EN61140, IEC61140 | ||
Width 33.8 mm | ||
Length 62.8mm | ||
Automotive Standard No | ||
The Infineon IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode, NTC and pressFIT contact technology.
High power density
Compact design