製造零件編號

Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3

RS庫存編號:: 258-7725
製造零件編號:: IKB10N60TATMA1
製造商:: Infineon

Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3

可享批量折扣

小計（1 包，共 5 件）*

TWD279.00

(不含稅)

TWD292.95

訂單超過 $1,300.00 免費送貨

有庫存

955 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
5 - 45	TWD55.80	TWD279.00
50 - 95	TWD53.00	TWD265.00
100 - 245	TWD49.80	TWD249.00
250 - 495	TWD46.40	TWD232.00
500 +	TWD42.80	TWD214.00

* 參考價格

RS庫存編號:: 258-7725
製造零件編號:: IKB10N60TATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	30 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	20V
	Number of Transistors	1
	Maximum Power Dissipation	110 W
	Package Type	TO-263-3
	Configuration	Single Collector, Single Emitter, Single Gate

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current 30 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage 20V
	Number of Transistors 1
	Maximum Power Dissipation 110 W
	Package Type TO-263-3
	Configuration Single Collector, Single Emitter, Single Gate

Datasheet - IKB10N60TATMA1

The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept. It has low conduction and switching losses also.

Lowest VCEsat drop for lower conduction losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg

Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

相關連結