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	品牌	onsemi
	Maximum Power Dissipation	69 W
	Number of Transistors	2
	Package Type	Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)

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	品牌 onsemi
	Maximum Power Dissipation 69 W
	Number of Transistors 2
	Package Type Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)

Datasheet - NXH80B120MNQ0SNG

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC

The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V 80 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant

onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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