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選取全部	屬性	值
	品牌	onsemi
	Product Type	IGBT Module
	Maximum Power Dissipation Pd	156W
	Number of Transistors	3
	Package Type	Q1BOOST
	Mount Type	Surface
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Height	13.9mm
	Length	55.2mm
	Standards/Approvals	RoHS
	Width	32.8 mm
	Series	NXH40B120MNQ1SNG
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type IGBT Module
	Maximum Power Dissipation Pd 156W
	Number of Transistors 3
	Package Type Q1BOOST
	Mount Type Surface
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Height 13.9mm
	Length 55.2mm
	Standards/Approvals RoHS
	Width 32.8 mm
	Series NXH40B120MNQ1SNG
	Automotive Standard No

Datasheet - NXH40B120MNQ1SNG

Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel-plated DBC

The ON Semiconductor NXH40B120MNQ1SNG is a power module containing a three channel boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

40 m/1200 V SiC MOSFET Half−Bridge

Thermistor

Options with Pre Applied Thermal Interface Material and without Pre Applied TIM

Press Fit Pins

These Devices are Pb Free, Halide Free and are RoHS Compliant

onsemi IGBT Module Q1BOOST, Surface

Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel-plated DBC

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