製造零件編號

onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

RS庫存編號:: 245-6973
製造零件編號:: NXH350N100H4Q2F2P1G
製造商:: onsemi

onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 托盤，共 36 件）*

TWD204,282.00

(不含稅)

TWD214,495.92

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月22日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每托盤*
36 - 36	TWD5,674.50	TWD204,282.00
72 +	TWD5,504.30	TWD198,154.80

* 參考價格

RS庫存編號:: 245-6973
製造零件編號:: NXH350N100H4Q2F2P1G
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Maximum Continuous Collector Current	303 A
	Maximum Collector Emitter Voltage	1000 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	4
	Maximum Power Dissipation	592 W
	Package Type	Q2PACK (Pb-Free/Halide-Free)

	選取全部
	品牌 onsemi
	Maximum Continuous Collector Current 303 A
	Maximum Collector Emitter Voltage 1000 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 4
	Maximum Power Dissipation 592 W
	Package Type Q2PACK (Pb-Free/Halide-Free)

Datasheet - NXH350N100H4Q2F2P1G

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins

The ON Semiconductor Three Level NPC Q2Pack Module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.

Extremely efficient trench with field stop technology
Low switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
Low package height
These devices are Pb free, Halogen Free and are RoHS Compliant

onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

訂單超過 $1,300.00 免費送貨

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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