製造零件編號

onsemi IGBT Module 1000 V Q2PACK, Surface

RS庫存編號:: 245-6973
製造零件編號:: NXH350N100H4Q2F2P1G
製造商:: onsemi

onsemi IGBT Module 1000 V Q2PACK, Surface

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 托盤，共 36 件）*

TWD204,282.00

(不含稅)

TWD214,495.92

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每托盤*
36 - 36	TWD5,674.50	TWD204,282.00
72 +	TWD5,504.30	TWD198,154.80

* 參考價格

RS庫存編號:: 245-6973
製造零件編號:: NXH350N100H4Q2F2P1G
製造商:: onsemi

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1000V
	Maximum Power Dissipation Pd	592W
	Number of Transistors	4
	Package Type	Q2PACK
	Mount Type	Surface
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Width	47.3 mm
	Height	12.3mm
	Length	93.1mm
	Series	NXH350N100H4Q2F2P1G
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1000V
	Maximum Power Dissipation Pd 592W
	Number of Transistors 4
	Package Type Q2PACK
	Mount Type Surface
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Width 47.3 mm
	Height 12.3mm
	Length 93.1mm
	Series NXH350N100H4Q2F2P1G
	Automotive Standard No

Datasheet - NXH350N100H4Q2F2P1G

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins

The ON Semiconductor Three Level NPC Q2Pack Module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.

Extremely efficient trench with field stop technology

Low switching loss reduces system power dissipation

Module design offers high power density

Low inductive layout

Low package height

These devices are Pb free, Halogen Free and are RoHS Compliant

onsemi IGBT Module 1000 V Q2PACK, Surface

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins

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