onsemi NXH450B100H4Q2F2SG IGBT Module 1000 V Q2BOOST - Case 180BR, Surface
- RS庫存編號:
- 245-6989
- 製造零件編號:
- NXH450B100H4Q2F2SG
- 製造商:
- onsemi
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- RS庫存編號:
- 245-6989
- 製造零件編號:
- NXH450B100H4Q2F2SG
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1000V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 79W | |
| Package Type | Q2BOOST - Case 180BR | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 12.3mm | |
| Length | 93.1mm | |
| Width | 47.3 mm | |
| Series | NXH450B100H4Q2F2SG | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1000V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 79W | ||
Package Type Q2BOOST - Case 180BR | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 12.3mm | ||
Length 93.1mm | ||
Width 47.3 mm | ||
Series NXH450B100H4Q2F2SG | ||
Automotive Standard No | ||
The ON Semiconductor Q2BOOST Module is a Si or SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.
Silicon or SiC Hybrid technology maximizes power density
Low switching loss reduces system power dissipation
Low inductive layout
Press fit and solder pin options
This Device is Pb free, Halogen Free and is RoHS Compliant
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