onsemi IGBT Module 1000 V Q2BOOST-PIM53, Surface

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TWD164,710.80

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TWD172,946.16

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RS庫存編號:
245-6970
製造零件編號:
NXH300B100H4Q2F2SG
製造商:
onsemi
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品牌

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1000V

Maximum Power Dissipation Pd

79W

Number of Transistors

6

Package Type

Q2BOOST-PIM53

Mount Type

Surface

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

17.6mm

Length

93.1mm

Series

NXH300B100H4Q2F2SG

Standards/Approvals

RoHS

Width

47.3 mm

Automotive Standard

No

The ON Semiconductor Q2BOOST Module is a high−density, integrated power module combines high performance IGBTs with 1200 V SiC diode.

Extremely Efficient Trench with Field Stop Technology

Low Switching loss reduces system power dissipation

Module design offers high power density

Low inductive layout

3 channel in Q2BOOST package

These are Pb free devices

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